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CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg JA -65 to +150 62.5 C C/W VCBO VCER VCEO VEBO IC IB PD 100 70 60 7.0 6.0 3.0 2.0 UNITS V V V V A A W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV IEBO BVCER BVCEO VCE=30V VCE=100V, VEB=1.5V VEB=7.0V IC=30mA, RBE=100 IC=30mA 70 60
MAX 700 1.0 5.0
UNITS A mA mA V V
* VCE(SAT) IC=4.0A, IB=400mA * VBE(ON) VCE=4.0V, IC=4.0A * hFE VCE=4.0V, IC=4.0A * hFE fT VCE=4.0V, IC=6.0A VCE=10V, IC=500mA, f=1.0MHz
1.1 1.5 20 5.0 2.5 70
V V
MHz
* Pulsed, 2% D.C.
R3 (17-June 2004)
Central
TM
Semiconductor Corp.
CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H I J K L M
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0 10 0 10 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15 15 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3)
R3 (17-June 2004)

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